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Magnetoresistance of a semiconducting magnetic wire with a domain wall

Dugaev, V. K., Barnas, J., Berakdar, J., Ivanov, V. I., Dobrowolski, W., Mitin, V. F.

Physical Review B 71, pp 024430 (2005)

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wavelength of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.

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