Poddubny A. N., Moskalenko A. S., Prokofiev A. A., Goupalov S. V., Yassievich I. N.
Physica Status Solidi C 8, pp 985 (2011)Energy relaxation of hot electrons and holes confined in silicon nanocrystals embedded in SiO2 matrix is studied theoretically. Phonon-assisted transitions rates strongly depend on nanocrystal diameter ranging from 108s−1 to 1012s−1.
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