Dugaev, V. K., Berakdar, J., Barnas, J., Dobrowolski, W., Mitin, V. F., Vieira, M.
Materials Science and Engineering C 25, pp 705-709 (2005)Magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall is analyzed theoretically in the limit of sharp domain walls and fully polarized electron gas is considered. The spin-orbit interaction of Rashba type is included into considerations. It is shown that the magnetoresistance in such a case can be relatively large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction can enhance the magnetoresistance. The role of localization corrections is also briefly discussed.
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